BYV34G-600_1
? NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 25 February 2009 2 of 9
NXP Semiconductors
BYV34G-600
Dual recti?er diode, ultrafast
3. Ordering information
4. Limiting values
Table 2. Ordering information
Type number
Package
Name
Description
Version
BYV34G-600 I2PAK plastic single-ended package (I2PAK); low-pro?le 3-lead TO-220AB SOT226
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse voltage - 600 V
VRWM
crest working reverse voltage - 600 V
VR
reverse voltage DC; Tmb
≤
138
°C - 600 V
IO(AV)
average output current square waveform;
δ
= 0.5; Tmb
≤
107
°C; both
diodes conducting
-20A
IFRM
repetitive peak forward current tp
=25μs square waveform;δ
= 0.5;
Tmb≤
107°C; per diode
-20A
IFSM
non-repetitive peak forward current tp
= 10 ms; sinusoidal waveform; per diode - 120 A
tp
= 8.3 ms; sinusoidal waveform; per diode - 132 A
Tstg
storage temperature
?40 +150
°C
Tj
junction temperature - 150
°C
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